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2SB1037 EP9154 2058783 BC857A LM10V33 LM10V33 00020 2058783
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 Transmissive Photosensors (Photo Interrupters)
ON1003
Photo Interrupter
A
For contactless SW, object detection Outline
ON1003 is an ultraminiature, highly reliable transmittive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package.
1.5
(1.0)
Slit width (0.3)
Unit : mm
A' 4.2 1.2
1.5 Device center (C0.3) 2-0.25 *3.2
Not soldered 1.0 max. 3.9
4.0 min. 5.2 2.8
Features
Ultraminiature : 4.2 x 4.2 mm (height : 5.2 mm) Fast response : tr, tf = 35 s (typ.) Highly precise position detection : 0.15 mm Gap width : 1.2 mm
, ,, ,
(1.5)
SEC. A-A' 4.2
(C0.5) Gate the rest 0.3 max. o1.5 +0.1 -0 2-0.5 *2.54
1
3
2
4
1 3 24 Pin connection (Note) 1. Tolerance unless otherwise specified is 0.2 2. ( ) Dimension is reference 3. * is dimension at the root of leads 4. Burrs should be less than 0.15mm
Absolute Maximum Ratings (Ta = 25C)
Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Reverse voltage (DC) Symbol Ratings VR IF PD*1 IC 6 50 75 20 35 6 75 Unit V mA mW mA V V mW C C C
*1
Input power derating ratio is 1.0mW/C at Ta 25C. *2 Output power derating ratio is 1.0mW/C at Ta 25C. *3 Soldering time is within 5 seconds.
Collector power dissipation Operating ambient temperature Temperature Storage temperature Soldering temperature
PC*2
Topr -25 to +85 Tstg - 40 to +100 Tsol
*3
260
Electrical Characteristics (Ta = 25C)
Parameter Input characteristics Reverse current (DC) Forward voltage (DC) Symbol VF IR ICEO VR = 3V VCE = 20V 100 35 Conditions IF = 20mA min typ 1.2 max 1.4 10 100 1300 0.4 Unit V A nA A V s
Output characteristics Collector cutoff current
Collector current IC VCE = 5V, IF = 5mA Transfer Collector to emitter saturation voltage VCE(sat) IF = 10mA, IC = 50A characteristics Response time tr , tf* VCC = 5V, IC = 0.1mA, RL = 1000
*
Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value)
,,
,,
50
RL
,, ,, ,,,
Soldering bath
Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO
more than 1mm
1
Transmissive Photosensors (Photo Interrupters)
ON1003
IF , IC -- Ta
60 60
IF -- V F
1.6 Ta = 25C
VF -- Ta
Forward current, collector current IF , IC (mA)
50
IF
50
IF = 50mA
Forward current IF (mA)
Forward voltage VF (V)
1.2
10mA
40
40
1mA 0.8
30 IC
30
20
20
0.4
10
10
0 - 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0 - 40 - 20
0
20
40
60
80
100
Ambient temperature Ta (C )
Forward voltage VF (V)
Ambient temperature Ta (C )
IC -- IF
5 VCE = 5V Ta = 25C 3
IC -- VCE
120 Ta = 25C 100
IC -- Ta
VCE = 5V IF = 5mA
Collector current IC (mA)
Collector current IC (mA)
4
Relative output current IC (%)
2 IF = 20mA
80
3
60
2
15mA 1 10mA 5mA 2mA
40
1
20
0
0
5
10
15
20
25
0
0
1
2
3
4
5
6
0 - 40 - 20
0
20
40
60
80
100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO -- Ta
1 VCE = 20V 10 3
tr -- I C
VCC = 5V Ta = 25C 10 3
tf -- I C
VCC = 5V Ta = 25C
10 -1
Dark current ICEO (A)
10 2
10 2
Rise time tr (s)
10 -2
RL = 2k 1k 10 100
Fall time tf (s)
RL = 2k 1k 10 100
10 -3
1 10 -4
Sig.IN Sig. OUT 50
VCC Sig. OUT RL 90% 10%
1
Sig.IN Sig. OUT 50
VCC Sig. OUT RL 90% 10%
10 -5 - 40 - 20
, ,,
0
20
40
60
80
100
10 -1 10 -2
tr
tf
10
,,
10 -1 10 -2 10 -1
td
tr
1
td
tf
10
10 -1
1
Ambient temperature Ta (C )
Collector current IC (mA)
Collector current IC (mA)
2
Transmissive Photosensors (Photo Interrupters)
ON1003
IC -- d (1)
100 VCE = 5V Ta = 25C IF = 5mA 100
IC -- d (2)
VCE = 5V Ta = 25C IF = 5mA
Relative output current IC (%)
80 Criterion 0 d 60
Relative output current IC (%)
80
60
40
40
20
20
0
0
1
2
3
4
0
0
0.5
Distance d (mm)
, ,,
d 1.0 1.5 2.0 2.5
Criterion 0
Distance d (mm)
3


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